The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 1995
Filed:
Oct. 30, 1992
Applicant:
Inventor:
Burhan Bayraktaroglu, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257197 ; 257751 ; 257603 ; 257607 ;
Abstract
Generally, and in one form of the invention, a p-n junction diffusion barrier is disclosed comprising a first semiconductor layer 28 of p-type conductivity, a second semiconductor layer 32 of n-type conductivity and a third semiconductor layer 30 of p-type conductivity disposed between the first and second layers, the third layer being doped with a relatively low diffusivity dopant in order to form a diffusion barrier between the first and the second semiconductor layers.