The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 1995

Filed:

May. 26, 1993
Applicant:
Inventors:

Abhay M Joshi, Plainsboro, NJ (US);

Krishna R Linga, Harrison, NJ (US);

Assignee:

Epitaxx, Inc., West Trenton, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
25037012 ; 257190 ;
Abstract

Leakage current in InGaAs/InAsP/InP lattice mismatched photodetectors can be reduced by providing graded InAsP compositions having abrupt interfaces between successive layers that maintain a lattice mismatch between the layers of 0.13% or less; doping the absorption layer with high levels of sulfur and by thermal cycling of the wafers. High yields of low leakage current photodetector arrays are obtained.


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