The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 1995
Filed:
Sep. 03, 1992
Jack H Linn, Melbourne, FL (US);
Robert K Lowry, Melbourne Beach, FL (US);
George V Rouse, Indiatlantic, FL (US);
James F Buller, Austin, TX (US);
Harris Corporation, Melbourne, FL (US);
Abstract
Low temperature silicon-on-insulator wafer bonding using a silicide bond formation reaction. Dielectric isolation with silicon dioxide, diamond, silicon nitride, and so forth yields buried resistors under trench isolated silicon islands. Buried dielectrics can be thermally susceptible films like diamond due to the low temperature of the bonding silicidation reaction. Bonding silicides also provide thermal dissipating layer between a buried diamond layer and a handle wafer for good overall thermal conductivity. Bonding silicides also act as diffusion barriers. The silicide bonding takes place in the presense of a liquid oxidizer such as aqueous solution of HNO.sub.3 and H.sub.2 O.sub.2.