The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 1995
Filed:
Jul. 15, 1994
Tor W Moksvold, Poughkeepsie, NY (US);
John Altieri, San Jose, CA (US);
Ching-Tzuen Tarn, San Jose, CA (US);
Colleen M Snavely, Manassas, VA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A lateral PNP bipolar transistor includes concentric circular emitter and annular base and dual collector regions. The inner collector region is moderately doped to provide good punch-through and Early voltage performance. The outer collector region is highly doped to provide low collector series resistance. A composite transistor made up of any desired number of individual transistors provides a transistor having a desired current capacity. The transistor annular base cross-section permits very accurate base width control during the manufacturing process.