The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 1995
Filed:
Oct. 04, 1993
Jaeshin Cho, Gilbert, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
The present invention includes forming an etched ohmic contact (10, 9) by applying a layer of an etch susceptible contact material (14) to a III-V semiconductor substrate (11). A portion of the contact layer (14A) is alloyed with the substrate (11) to form are etch resistant area (14A) of the contact layer. The contact layer (14) is selectively etched to remove etch susceptible portions of the contact layer while leaving the etch resistant area (14A) on the substrate (11). Another alloy operation is performed to form ohmic contact between the etch resistant area (14A) and the substrate (11). Consequently, an etch ohmic contact (10, 9) that is substantially devoid of gold is formed.