The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1995
Filed:
Jan. 29, 1993
Gregory H Henderson, Atlanta, GA (US);
Lawrence C West, Clarksburg, NJ (US);
Thomas K Gaylord, Atlanta, GA (US);
Charles W Roberts, Tinton Falls, NJ (US);
Elias N Glytsis, Atlanta, GA (US);
Moses T Asom, Trexlertown, PA (US);
Other;
Abstract
A solid state, electronic, optical transition device includes a multiple-layer structure of semiconductor material which supports substantially ballistic electron/hole transport at energies above/below the conduction/valance band edge. The multiple layer structure of semiconductor material includes a Fabry-Perot filter element for admitting electrons/holes at a first quasibound energy level above/below the conduction/valance band edge, and for depleting electrons/holes at a second quasibound energy level which is lower/higher than the first energy level. Such an arrangement allows common semiconductor material to be used to produce emitters and detectors and other devices which can operate at any of selected frequencies over a wide range of frequencies.