The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 1995
Filed:
Jul. 23, 1993
Kazutaka Manabe, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A method for fabricating a semiconductor device includes the steps of forming a MIS transistor, a contact hole, a sidewall insulating film, a first electrode, a dielectric film and a second electrode. The contact hole is formed by depositing a lower and an upper insulating film to cover the MIS transistor and selectively etching the insulating films to expose an upper surface of one of impurity diffusion layers serving as source/drain regions. The sidewall insulating film is formed by depositing an insulating material film using a material whose etching-back rate is different from that of the material for the upper insulating layer. The etching rate of the upper insulating layer is higher than that for the insulating material film. The etching-back under this etching condition results in the formation of the sidewall insulating film that projects upwardly from the surface of the upper insulating layer. With this configuration, it is possible to increase a surface area of the electrodes of a capacitor.