The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1995
Filed:
Sep. 21, 1992
David F Welch, Palo Alto, CA (US);
Robert G Waarts, Palo Alto, CA (US);
Jo S Major, San Jose, CA (US);
Ross D Bringans, Cupertino, CA (US);
David K Fork, Palo Alto, CA (US);
G A Connell, Cupertino, CA (US);
Robert L Thornton, East Palo Alto, CA (US);
SDL, Inc., San Jose, CA (US);
Xerox Corporation, Stamford, CT (US);
Abstract
A monolithic multi-wavelength laser diode array having a composite active region of at least two dissimilar quantum well layers that are partially mixed in at least one of their constituent atomic species in at least one area of the active region. Different areas of the active region are characterized by different emission wavelengths determined by the degree of intermixing. An impurity free interdiffusion, such as vacancy enhanced interdiffusion, is used to provide the intermixing. Each area may have one or more waveguides and distributed Bragg reflector gratings tuned to the emission wavelength of the corresponding area of the active region. Each area or waveguide may also be separately pumped with an individually addressable current injection electrode. The laser output may be coupled into a ferroelectric frequency doubler integrally formed on the array substrate. The frequency doubler has periodically poled waveguides for quasi-phase matching in front of areas of the laser array emitting light which is to be doubled in frequency.