The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1995
Filed:
Jul. 26, 1993
Arkalgud Sitaram, Austin, TX (US);
Papu D Maniar, Austin, TX (US);
Jeffrey T Wetzel, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A transition-metal silicide process includes the formation of a boron nitride capping layer overlying a transition-metal layer. In one embodiment, a transition-metal layer (30) is deposited onto a silicon surface (22), and onto a polysilicon gate electrode (12). A capping layer (32), which can be either boron nitride or boron oxynitride is deposited onto the transition-metal layer (30), and an annealing process is carried out to form a transition-metal/silicon alloy layer (34, 36, 38) at the silicon surface (22), and on the gate electrode (12). The capping layer (32) overlies the transition-metal layer (30) during the annealing process and prevents the formation of an oxide layer at the silicon surfaces (22, 12). After the annealing process is complete, the capping layer (13) is removed by a selective wet etch process, and a second annealing step is carried out to form a transition-metal silicide layer (40, 42, 44).