The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1995
Filed:
Jul. 07, 1993
Tetsuo Shiba, Itami, JP;
Shogo Takahashi, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Element production process in a method for producing an embedded type optoelectronic integrated circuit comprising an optical element part and a signal processing part, includes steps of producing a mask film on a surface of the substrate and removing a predetermined region of the film to produce a selective growth mask, producing a concave portion at a predetermined region on the surface of the substrate by etching using the selective growth mask, producing a crystal layer which is to be an optical element part in the concave part by crystal growth using the selective growth mask, flattening the surface of the crystal layer by grinding swelling crystal at the edges of the concave portion, and removing the selective growth mask and conducting mirror polishing by mechanochemical etching. Therefore, even when an optical device is embedded in the substrate using crystal growth method, a step due to swelling crystal does not arise on the substrate and .parts of wafer damaged by grinding is removed. Thus, the following process is eased.