The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1995
Filed:
Jul. 07, 1994
Scott G Singlevich, Colorado Springs, CO (US);
United Technologies Corporation, Hartford, CT (US);
Abstract
A method of forming a polycrystalline silicon resistor includes the step of forming a resistor region of poly, the region being doped per a desired resistivity of the resistor. The exposed top and side portions of the poly region are completely covered with an insulating oxide. A predetermined portion of the oxide is etched away, resulting in a portion of the oxide completely covering the resistor poly. The resistor poly region and oxide are covered (masked) with photoresist, the mask extending beyond the sides of the poly. The remaining oxide in the area outside of the mask is etched away, and the photoresist is removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile