The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1995
Filed:
May. 12, 1994
Kaoru Kanehachi, Tokyo, JP;
Nippon Precision Circuits Inc., Tokyo, JP;
Abstract
A method of making a semiconductor device having formed thereon an inductor comprises a silicon substrate. A cut out region is obtained by removing a part of the silicon substrate in a hollow shape which may be a hollow cavity or a hollow cavity with an insulating material having a low complex permittivity such as silicon oxide buried therein. An insulator layer is formed on the cut out region and on the periphery thereof. A connection layer serves as one of the leads of the inductor and is formed using an electric conductive material such as a metal or doped polycrystalline silicon. A contact hole is provided in the interlayer insulation layer. A connection layer serves as an inductor and the other lead of the inductor, which is formed using an electric conductive material such as a metal. A protective insulator layer is also provided on the top of the structure.