The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 1995
Filed:
Mar. 31, 1994
Applicant:
Inventor:
Jaeshin Cho, Gilbert, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 22 ; 437176 ; 437934 ; 437950 ;
Abstract
A method for making a shallow junction in a gallium arsenide substrate including implanting doping ions into an upper surface of the substrate and incorporating sulfur into the upper surface of the substrate after the ion implantation. A capping layer is deposited on the upper surface and the substrate is heat annealed to activate the doping atoms.
Cho, Jaeshin. (1995). Methods for making and using a shallow semiconductor junction (U.S. Patent No. 5384269). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5384269
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile