The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1995
Filed:
Dec. 21, 1993
Applicant:
Inventors:
Mohamad M Mojaradi, Los Angeles, CA (US);
Tuan A Vo, Hawthorne, CA (US);
Assignee:
Xerox Corporation, Stamford, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H03K / ;
U.S. Cl.
CPC ...
257489 ; 257491 ; 257409 ; 327427 ; 327566 ;
Abstract
A high current, high voltage transistor which can be easily electrically stacked to extend the voltage range and uses less silicon area than a conventional stacked transistor configuration and a configuration of field plates that provide the greatest breakdown voltages with the highest ohmic values. Also, a star shaped field plate design which provides the greatest breakdown voltages with the highest ohmic values. The field plate is constructed using several concentric rings connected by fingers that are wider at towards the center of the concentric rings and narrower towards the perimeter of the concentric rings.