The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1995
Filed:
Sep. 27, 1993
Applicant:
Inventor:
Rene Stein, Roettenbach, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257410 ; 257 76 ; 257 77 ; 257613 ; 257615 ;
Abstract
A MISFET (metal-insulator semiconductor field-effect transistor) may be used for application at temperatures above 200.degree. C. In particular, leakage currents between the gate electrode (6) and the drain (8) are kept at a low level, and a considerable rate of rise in its control characteristic is achieved. An insulating layer (4) of diamond is arranged between the gate electrode (6) and a semiconductor (2) having a larger energy gap than silicon (Si).