The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1995
Filed:
Dec. 08, 1993
Howard B Pein, Briarcliff Manor, NY (US);
Philips Electronics North America Corporation, New York, NY (US);
Abstract
A lateral Semiconductor-On-Insulator (SOI) device includes a substrate, a buried insulating layer on the substrate, and a lateral semiconductor device such as an LDMOS transistor, an LIGBT or a lateral thyristor on the insulating layer. The semiconductor device (in the case of an LDMOS transistor) includes a source region, a channel region, an insulated gate electrode over the channel region, a lateral drift region formed of a continuous layer of a lightly-doped semiconductor material on the buried insulating layer, and a drain contact region which is laterally spaced apart from the channel region and connected to the channel region by the drift region. A buried diode is formed in the substrate, and is electrically coupled to the drain contact region by a portion of the drift region which extends laterally in the region between the drain contact region and the buried diode.