The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1995
Filed:
Jul. 22, 1993
Takahiro Nakamura, Tokyo, JP;
Tomoji Terakado, Tokyo, JP;
NEC Corporation, , JP;
Abstract
In a method of manufacturing a semiconductor device, first strip dielectrics (33) and surfaces (35) were formed by taking first strip parts (31) of a dielectric layer (29) away from a principal surface (13) of a semiconductor substrate (11) in parallel by using a photo-lithography method. Active regions (43) were formed on the first strip surfaces (35) by using a metal organic vapor phase epitaxy method to be covered with lattice planes each of which is (111)B. Second strip dielectrics (35) and surfaces (47) were formed by taking second strip parts (31a) of the first strip dielectrics (31) away from the principal surface (13) with the second strip surfaces (47) positioned between the active regions (43) and the second strip dielectrics (45). Current block regions (57) were formed on the second strip surfaces (47) and the active regions (43) by using the metal organic vapor phase epitaxy method.