The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1995
Filed:
Mar. 15, 1993
Satwinder Malhi, Garland, TX (US);
Michael C Smayling, Missouri City, TX (US);
Stephen A Keller, Sugarland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A lateral DMOS (LDMOS) transistor 10 is disclosed herein. In one embodiment, an n doped silicon layer 14 is provided and a field oxide region 24 is formed therein. A p doped D-well region 20 is formed in the silicon layer 14 and includes a p doped shallow, extension region 22 which extends from the D-well region 20 to a first side of the field oxide region 24. A first n doped source/drain region 16 is formed in the D-well region 20 and is spaced from the field oxide region 24. Also, a second n doped source/drain region 18 formed in the silicon layer 14 on a second side of the field oxide region 24. A gate region 26 is formed over the surface of the silicon layer 14 and over a portion of the first source/drain region 16, the D-well region 20, and a portion of the field oxide region 24.