The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1995
Filed:
Mar. 31, 1993
Henry F Gray, Alexandria, VA (US);
David S Hsu, Alexandria, VA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
Thin-film edge field emitter devices are provided which are capable of low voltage operation. The method of manufacture of the devices takes advantage of chemical beam deposition and other thin-film fabrication techniques. Both gated and ungated devices are provided and all of the devices include a plurality of thin-films deposited on the side-wall of a non-flat substrate. The gated emitter devices include alternating conductive and electrically insulating layers, and upper parts of the latter are removed to expose the upper edges of the conductive layers, with a central one of these conductive layers comprising an emitter for emitting electrons. The emitter devices can be inexpensively produced with a high degree of precision and reproducibility without the need for expensive lithographic machines. The devices can be used in field emitter arrays employed as vacuum transistors, vacuum microelectronic analog and digital devices, and modulated or cold electron sources.