The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 1995
Filed:
Mar. 04, 1993
Applicant:
Inventors:
Makoto Kondo, Kawasaki, JP;
Chikashi Anayama, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
117104 ; 117925 ; 117937 ;
Abstract
A method of manufacturing a semiconductor device having a step of growing a plurality of electrically connected p-type group III-V compound semiconductor layers by organo-metallic vapor phase epitaxy. In growing the plurality of p-type group III-V compound semiconductor layers, all or some of the p-type layers are grown by using a Mg organo-metallic compound as a p-type impurity and adding an Al organo-metallic compound of a predetermined amount. Doping both the Mg organo-metallic compound and Al organo-metallic compound at the same time considerably shortens the Mg doping delay.