The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 1995

Filed:

Mar. 02, 1993
Applicant:
Inventor:

Jeffrey B Davis, Raymond, ME (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
326 57 ; 326 68 ; 326121 ; 327534 ;
Abstract

A tristate output buffer circuit provides overvoltage protection from voltage signals on a common bus having a higher voltage level than the internal high potential power rail of the tristate output buffer circuit. A high potential level pseudorail (PV) is coupled to the NWELL of a P channel output pullup transistor (P4). A comparator circuit (P5,P6) couplings the pseudorail (PV) to the output (VOUT). The comparator circuit passgates (P5,P6) are constructed to couple the pseudorail (PV) to the high potential power rail (VCC) for VOUT<VCC and to couple the pseudorail (PV) to the output (VOUT) for VOUT>VCC. A feedback transistor (P1) couples the pseudorail (PV) to an internal node of the tristate output buffer circuit at the control gate node of the output pullup transistor (P4). The feedback transistor (P1) control gate node is coupled to a tristate enable input (EN) for turning on the feedback transistor (P1) during the tristate operating mode and holding off the output pullup transistor (P4). At least one N channel pullup transistor (N1,N2) is coupled between the control gate node of the output pullup transistor (P4) and high potential power rail (VCC) to isolate overvoltage at the internal node from the high potential power rail (VCC). The N channel pullup transistors (N1,N2) are selected to have a turn on voltage threshold VTN less than the absolute value of the turn on voltage threshold VTP of the P channel output pullup transistor.


Find Patent Forward Citations

Davis, Jeffrey. (1995). Overvoltage tolerant output buffer circuit (U.S. Patent No. 5381061). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5381061

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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