The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 1995
Filed:
Aug. 11, 1993
Applicant:
Inventor:
Keiro Komatsu, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 85 ; 257 94 ; 257 13 ; 257184 ;
Abstract
In a ridge type or buried hetero type waveguide structure, a semiconductor layer functioning as one selected from a guiding layer, an absorption layer and an active layer includes InGaAsP mixed crystal, and semiconductor cladding layers include InGaAsP mixed crystal having a bandgap energy larger than that of the InGaAsP crystal layer included in the semiconductor layer functioning as one selected therefrom.