The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 1995
Filed:
Apr. 18, 1994
Akito Kuramata, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A process for growing a semiconductor crystal, comprising growing a group III-V compound semiconductor containing P as a group V element by an organometal vapor phase epitaxy by using tertiary butyl phosphine (TBP) as a source of P constituting a grown layer and doping the semiconductor with a dopant gas during a growth of the semiconductor. In this process, the source gas and dopant gas are fed under a condition satisfying a requirement represented by the following formula, to conduct a growth of the crystal: ##EQU1## wherein n is a carrier concentration of the growing semiconductor crystal, T is a temperature of the substrate and an atmosphere in the vicinity of the substrate, P.sub.TBP.sup.0 is an equilibrium vapor pressure of TBP or a decomposition product thereof, P.sub.D.sup.0 is an equilibrium vapor pressure of a dopant or a decomposition product thereof, P.sub.0 is a total pressure, f.sub.0 is a total flow rate, and f.sub.TBP is a flow rate of TBP.