The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 1995
Filed:
Dec. 14, 1992
Applicant:
Inventor:
Pradeep L Shah, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
365185 ; 365182 ; 437 52 ; 437 56 ; 437 59 ;
Abstract
Memory cell transistors are provided in which pillar structures or column structures (12, 12a, 14, and 14a) are formed at the face of a semiconductor substrate (10). Floating gates (46) and control gates (52) are formed adjacent to the pillar structures or column structures (12, 12a, 14, and 14a). The floating gates (46) and control gates (52) are insulatively disposed by gate oxide layer (42) and insulating layer (50). Source regions (36, 40, and 48) are implanted in the semiconductor substrate (10). Drain regions (38) are also implanted in the pillar structures or column structures (12, 12a, 14 and 14a).