The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 1995
Filed:
May. 13, 1993
Applicant:
Inventors:
Minoru Takeda, Kanagawa, JP;
Michio Negishi, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; H01L / ;
U.S. Cl.
CPC ...
365174 ; 257 66 ; 257 67 ; 257 68 ; 257903 ; 365154 ;
Abstract
An SRAM memory cell structure, wherein a word line is disposed near the center of a cell, each one of driver transistors is disposed on both sides thereof substantially in parallel with each other, a contact portion for a gate electrode of said driver transistor is formed being laminated on a word transistor formed together with said word line, and a semiconductor, wherein an upper transistor and a lower transistor are disposed, an overlapped portion in which at least three layers each having a diffusion region for forming each of said transistors are overlapped is formed, and a contact is taken at said overlapped portion.