The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 1995
Filed:
Jul. 13, 1992
Masayuki Kasamoto, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
In a semiconductor integrated circuit device including a substrate bias voltage generating circuit supplying a substrate bias voltage to internal circuit performing original functions and a substrate where the internal circuit is formed, an N channel MOS transistor is provided between the internal circuit and power supply pad receiving an external voltage Vcc for driving the circuit. The transistor is controlled such that it is rendered conductive when substrate potential V.sub.SB is higher than the threshold voltage of MOS transistor and non-conductive when potential V.sub.SB is lower than the threshold voltage. Since supply of power supply voltage Vcc to the internal circuit is interrupted if latch-up is caused in the internal circuit and substrate potential V.sub.SB rises, internal circuit is immediately freed from the latch-up state even if latch-up is caused. Therefore, the internal circuit is protected from being heated or destructed by a current due to the latch-up.