The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 1995
Filed:
Jul. 09, 1992
Akio Uenishi, Fukuoka, JP;
Yasuaki Fukumochi, Fukuoka, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The semiconductor device is composed of a thyristor and a MOSFET cascade-connected. The thyristor includes a bipolar transistor cascade-connected with the MOSFET, the base (p.sup.-- semiconductor region) of which is adapted to be punched through by the application of a working voltage. Thus, the thyristor can easily be latched and unlatched in response to the turn-on and turn-off of the MOSFET. Thus the semiconductor device can be securely on/off controlled by only the single gate (G) of the MOSFET. By using such semiconductor device as a switching element in a flash control device, a high performance flash control device with high flashing efficiency is provided.