The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 1995

Filed:

Nov. 30, 1992
Applicant:
Inventors:

Yoji Nishio, Hitachi, JP;

Ikuro Masuda, Hitachi, JP;

Kazuo Kato, Ibaraki, JP;

Shigeo Kuboki, Nakaminato, JP;

Masahiro Iwamura, Hitachi, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H03K / ;
U.S. Cl.
CPC ...
307446 ; 307451 ; 307570 ;
Abstract

A high speed and low power consumption semiconductor integrated circuit device has a plurality of internal circuits each including circuit elements for performing a desired circuit operation, a plurality of input circuits for receiving external input signals and supplying the signals to the internal circuits and a plurality of output circuits for receiving the output signals from the internal circuits and supplying signals to an external circuit. Each of the internal circuits is primarily constructed by bipolar transistors and MOS transistors, and at least one of each of the input circuits and each of the output circuits is primarily constructed by bipolar transistors.


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