The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 1995
Filed:
Mar. 31, 1994
Keith M Hutchings, Groombridge, GB;
Kenneth R Whight, Horsham, GB;
U.S. Philips Corporation, New York, NY (US);
Abstract
A mask (4) defining at least one window (4a) is provided on one major surface (1a) of a semiconductor body (1). The semiconductor body (1) is etched to define a groove (5) into a first region (2) of one conductivity type through a second region (3) of the opposite conductivity type. A relatively thin layer of gate insulator (6) is provided on the surface (5a) of the groove (5). A gate conductive region (7) of an oxidizable conductive material is provided within the groove (5) to define with the gate insulator layer an insulated gate structure (8) bounded by a conduction channel-defining area (30) of the second region (3). A step (15) in the surface structure is then defined by causing the insulated gate structure (8) to extend beyond the surrounding surface by oxidizing the exposed (7a) gate conductive material to define an insulating capping region (9) on the gate conductive region (3). A layer (10) is formed over the surface structure and etched anisotropically to leave portions (10a) of the layer on the side wall (8'a) of the step (15) defined by the insulated gate structure (8) and to define beneath the portions (10a) third regions (11) of the one conductivity type within the second region (3). An electrically conductive layer (12) is deposited to contact both the second and the third regions (3 and 11).