The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 1995
Filed:
May. 18, 1993
Nobuhiko Inoue, Tokyo, JP;
Masaki Yoshimaru, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device having a capacitor comprises the steps of forming a silicon oxide layer on a semiconductor substrate, forming a first silicon nitride layer on the silicon oxide layer, forming a polycrystalline silicon layer as a lower electrode layer of the capacitor on the first silicon nitride layer, subjecting the polycrystalline silicon layer to the natural outside atmosphere so as to form a native oxide layer on the polycrystalline silicon layer, removing the native oxide layer to expose the polycrystalline silicon layer to an inactive gas atmosphere, Forming a second silicon nitride layer on the exposed polycrystalline silicon layer subjecting the second silicon nitride layer to the outside atmosphere so as to form a capacitor oxide layer on the polycrystalline silicon layer, the second silicon nitride layer and the capacitor oxide layer working as a dielectric layer of the capacitor, and forming an upper electrode layer of the capacitor on the capacitor oxide layer.