Method of producing semiconductor device

Abstract

A method in which in case different kinds of processing are consecutively conducted in a single chamber of a plasma device, a residual portion of a processing gas used in one process is prevented from affecting a next process, is disclosed. A chemical species resulting from the processing gas in one process is prevented from being generated in forming a plasma in the next processing, by introducing an inactive gas after the processing gas used in one processing is exhausted once, or by introducing the inactive gas while exhausting the processing gas, or by cyclically repeating exhaust of the processing gas and introduction of the inactive gas, prior to the next process. The degree of exhaust may be monitored on the basis of an emission spectrum of the plasma. If the exhaust is carried out between a dry etching process conducted while holding a substrate on a single electrode electrostatic chuck and a process of removing residual charge of the chuck in a state of non-bias application to the substrate, or between a just etching process and an over etching process, deterioration of an etching shape due to radicals in the plasma may be prevented.