The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 1994
Filed:
Nov. 10, 1993
Hideki Usuki, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
The memory ratio is improved and the data holding ability on reading data is enhanced by providing a resistive element between an access transistor and a flip-flop, which form a memory cell of a static memory. Even if the threshold voltage of the access transistor is lowered, the memory cell ratio can be increased. Accordingly, the minimum operating voltage can be lowered and the operating margin for a power source voltage can be increased and simultaneously with this, the soft error immunity can be enhanced. Since the memory cell ratio of the semiconductor memory of the present invention is enhanced by the resistive element, the necessity to preset a lower current drive ability of the access transistor for a drive transistor is decreased. As a result of this, the size of the memory cell can be decreased. Further, the current consumed by the memory cell is decreased by the resistive element.