The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 1994
Filed:
Mar. 29, 1993
Applicant:
Inventors:
Hiroyuki Tanaka, Fuchu, JP;
Yasushi Hatta, Kodaira, JP;
Tatsuya Kouketsu, Akishima, JP;
Yasushi Takahashi, Hachiohji, JP;
Kyosuke Ishikawa, Tachikawa, JP;
Keiichi Kitamura, Kokubunji, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330253 ; 330277 ; 330311 ; 330307 ;
Abstract
A semiconductor integrated circuit device of a type wherein loads for source follower amplifiers FETs whose gates receive an amplified signal produced from a differential amplifier section and whose each source generates an output signal, comprise first load FETs whose each gate area is small and second load FETs which are respectively series-connected with the first load FETs, whose each gate length is relatively long and each of which has small drain conductance.