The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 1994
Filed:
Sep. 27, 1993
Manabu Kojima, Kawasaki, JP;
Naoshi Higaki, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A lateral bipolar transistor includes an insulating substrate, a single crystal semiconductor layer having a first conductivity, a mask layer which has a substantially vertical side surface and which is in contact with the single crystal semiconductor layer, and an insulating sidewall formed along the side surface of the mask layer. A base region is located under the insulating sidewall and formed in the single crystal semiconductor layer. The base region has a second conductivity opposite to the first conductivity and contains an impurity implanted by an ion implantation process. The single crystal semiconductor layer has an underlying portion on which the mask layer and the insulating sidewall are formed. An emitter region is formed in a first portion of the single crystal semiconductor layer other than the underlying portion. A collector region is formed in a second portion of the single crystal semiconductor layer other than the underlying portion.