The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 1994
Filed:
Sep. 25, 1992
Johnson J Lin, Plano, TX (US);
David R Wyke, Carrollton, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method and structure for a titanium tungsten (TiW)/tungsten local interconnect (136) for cells (100) of semiconductor device includes steps and structure resulting from sputtering a titanium tungsten (TiW) layer (128) on semiconductor structure (100) and then forming a tungsten layer over the TiW layer (128). Then, the method is to pattern a layer of resistive polymer (32) such as photoresist in a predetermined lithographic pattern over the structure (100). This forms the local interconnect (136) from the TiW layer (128). Then, by dry etching, the process removes exposed portions of the tungsten and TiW layers. A wet strip process removes resistive polymer (32) from the semiconductor structure (100) to yield TiW/tungsten interconnect (136) for the semiconductor structure (100). Alternatively a single TiW layer is used in which exposed portions of the TiW layer are removed by a wet etch.