The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 1994

Filed:

Dec. 02, 1993
Applicant:
Inventors:

Arthur G Foyt, Glastonbury, CT (US);

Paul L Provenzano, West Hartford, CT (US);

James L Swindal, Easthampton, CT (US);

Robert A Wagner, Manchester, CT (US);

Assignee:

United Technologies Corporation, Hartford, CT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G / ;
U.S. Cl.
CPC ...
3612834 ; 7351 / ;
Abstract

A silicon capacitive pressure sensor is disclosed having a silicon diaphragm and a silicon substrate arranged in parallel and separated by a glass dielectric spacer. The glass is deposited onto a surface of the substrate using an ion milling machine. The sensor further includes a transition piece attached to a second layer of glass insulator disposed between the silicon diaphragm and the transition piece. The transition piece has a throughbore formed therein for applying a fluid to a surface of the silicon diaphragm, the fluid having a pressure desired to be measured by the sensor. The glass disposed between the diaphragm and the transition piece is deposited onto the transition piece using the ion milling process.


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