The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 1994
Filed:
Nov. 10, 1993
James R Griffiths, Roanoke, VA (US);
Inder J Bahl, Roanoke, VA (US);
ITT Corporation, New York, NY (US);
Abstract
A power amplifier for microwave frequencies utilizes a FET device operating from a common voltage source. The voltage source has the positive terminal coupled to the drain electrode of the FET. The gate electrode of the FET is adapted to receive a RF signal while the source electrode of the FET includes a voltage limiting diode that is in parallel across the source impedance. In operation the extra current required from the voltage source during power amplification is passed through the diode and the FET source bypass capacitor. This results in the FET source voltage remaining relatively constant to enable improved power and gain operation.