The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 1994
Filed:
Apr. 05, 1994
Randy A Roush, King George, VA (US);
Michael S Mazzola, King George, MS (US);
David C Stoudt, King George, VA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
Semi-insulating gallium arsenide wafers manufactured with varying silicon nsity shallow donors are copper compensated by heating to temperature of at least 550.degree. C. to thermally diffuse the copper into the wafers and thereby provide deep copper acceptors in the wafer. Higher annealing temperatures are employed for higher concentrations of silicon in the wafers and the thermal diffusion is accomplished in the presence of copper, and in some instances, in the presence of varying quantities of arsenic. The copper compensated, silicon doped, gallium arsenide wafers obtained have the electrical property characteristic capability of being used as photoconductive switching components. In one aspect of the invention the silicon doped gallium arsenide wafer is sealed in a quartz ampoule in the presence of solid copper and solid arsenic and heated to the annealing temperature. In another aspect of the invention, the copper and arsenic are flowed as vapors over the silicon doped gallium arsenide wafer disposed in a reaction tube within a diffusion furnace, while the wafer is heated to the annealing temperature.