The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 1994
Filed:
Nov. 23, 1993
Ho Y Kwon, Seoul, KR;
Goldstar Electron Co., Ltd., , KR;
Abstract
A method for fabricating a transistor having a lightly doped drain structure is disclosed. The method comprises the steps of: forming a gate insulating film over a first conductive semiconductor substrate; covering the gate insulating film with a gate layer and an insulating film for gate cap, in due order; forming an insulating film for mask over the insulating film for gate cap; applying an etch process to the insulating film for mask to remove a predetermined portion of the insulating film for mask; forming a pair of spacers at both sides of the etched portion of the insulating film for mask; implanting first conductive impurity ions; burying a first material layer in the etched portion of the insulating film for mask; removing the spacers; implanting second impurity ions at a low density to form two lightly doped regions in the semiconductor substrate; removing the first material; burying a second material layer in the etched portion of the insulating film for mask, again; removing the insulating film for mask; applying an etch process to the insulating film for gate cap and the gate layer by use of the second material layer as a mask to form a gate cap insulating film and a gate; and implanting a second conductive impurity ions at a high density to form a high density source region and a high density drain region.