The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1994
Filed:
Apr. 29, 1994
Applicant:
Inventors:
Assignee:
Max-Planck Gesellschaft zur Foerderung der Wissenschaften e.V., Goettingen, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257592 ; 257-9 ; 257 12 ; 257 20 ; 257105 ; 257192 ; 257280 ; 257464 ; 257593 ; 257604 ; 257656 ; 257458 ;
Abstract
A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A preferred device is a bipolar transistor in which case the Dirac-delta doped p-type layer 38 is directly between n-type collector and emitter layers (32, 33). The bipolar transistor described herein has an extremely low base width and is capable of operating at high frequencies.