The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1994
Filed:
Sep. 16, 1993
Hiroya Sato, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A vertical type construction transistor of this invention includes: a semiconductor substrate; a semiconductor multilayer formed on the semiconductor substrate, the semiconductor multilayer including at least an emitter layer, a collector layer, and a base layer; a first electrode electrically connected to the base layer; a second electrode electrically connected to one of the emitter layer and the collector layer; a third electrode formed on the semiconductor multilayer, and electrically connected to the other of the emitter layer and the collector layer, the third electrode being extended in a first direction; an insulating film formed substantially over the semiconductor multilayer; and an overlay electrode at least partially formed on the insulating film, the overlay electrode being electrically connected to the third electrode, at least partially formed on the insulating film, and extending out in a direction normal to the first direction so as to be in partial contact with the semiconductor substrate, the overlay electrode having a width substantially similar to the length of the third electrode in the first direction.