The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 1994
Filed:
Jun. 24, 1992
Applicant:
Inventor:
Masanori Noda, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 45 ; 437 48 ;
Abstract
A method of manufacturing a ROM which has a memory cell array with a plurality of MIS transistors which are serially connected. An impurity of the same conductivity type as the semiconductor substrate is introduced by ion implantation after forming a field oxide and a gate electrode so as to compensate for an impurity of the opposite conductivity type, which is simultaneously ion implanted beneath the field oxide following ion implantation for programing so as to penetrate the gate electrode and a gate oxide. Punch through between adjacent cells is suppressed by the impurity of the same conductivity type.