The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 1994

Filed:

Nov. 23, 1992
Applicant:
Inventor:

James T Sundby, Tracy, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H03K / ; H01L / ;
U.S. Cl.
CPC ...
327543 ; 327546 ; 327541 ; 327389 ; 327434 ; 326112 ;
Abstract

A circuit for switching the well in a CMOS circuit to one of two power supply rails. In, for example, an N-well CMOS process, when an output is driven by a PMOS pull-up transistor, the P+ (drain of the PMOS) to N-well junction may be forward biased if the rail drops to ground. This will cause the output to be pulled to ground. The switching circuit of the present invention avoids the grounding of the output by automatically switching the N-well to the higher power supply rail so that grounding the rail would not cause the output to fall. MOS switches connect the well to either of the power supplies. Therefore, there is no voltage drop from the power supply to the well as in the case of switching circuits using diodes. Also, this circuit connects the well to the highest power supply regardless of which power supply drops to ground. Therefore, it does not require one power supply to be always on for proper operation. A similar P-well design of the switching circuit would provide the same protection for an output drive circuit with an NMOS pull-down transistor.


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