The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 1994

Filed:

Jun. 21, 1993
Applicant:
Inventors:

Robert P Dixon, Chandler, AZ (US);

Randall C Gray, Tempe, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
327109 ; 327108 ; 327379 ; 327427 ;
Abstract

A two stage gate drive circuit (10) for controlling a power transistor (12) has been provided. The drive circuit includes a first stage (14) coupled to a first supply voltage terminal for providing a high current drive signal to the power transistor for quickly switching on the power transistor. However, once the power transistor is turned on, the first stage becomes inactive and a second stage (16) coupled to a second supply voltage terminal provides a low current drive signal to the power transistor for fully enhancing the power transistor and lowering its on resistance. The gate drive circuit further includes a timer circuit (18) for rendering the first stage active for predetermined period of time.


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Dixon, Robert. (1994). Two stage gate drive circuit for a fet (U.S. Patent No. 5371415). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5371415

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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