The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 1994
Filed:
Jan. 28, 1993
Applicant:
Inventor:
Yoshio Nishihara, Kanagawa, JP;
Assignee:
Fuji Xerox Co., Ltd., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257435 ; 257 57 ; 257 61 ; 257 72 ;
Abstract
A thin film transistor comprising a gate electrode of electrically conductive material, a semiconducting material, a gate insulating material located between the gate electrode and the semiconducting material, a source electrode of electrically conductive material adjacent to the semiconducting material, a drain electrode of electrically conductive material adjacent to the semiconducting material, and a light intercepting material for preventing the incidence of light on the semiconducting material wherein the light interrupting material layer is formed of the same electrically conductive material as the source electrode and the drain electrode.