The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 1994
Filed:
Jul. 02, 1993
Albert W Vinal, Cary, NC (US);
Michael W Dennen, Raleigh, NC (US);
Thunderbird Technologies, Inc., Research Triangle Park, NC (US);
Abstract
A field effect transistor includes a polycrystalline silicon gate having a semiconductor junction therein. The semiconductor junction is formed of first and second oppositely doped polycrystalline silicon layers, and extends parallel to the substrate face. The polycrystalline silicon gate including the semiconductor junction therein is perfectly formed by implanting ions into the top of the polycrystalline silicon gate simultaneous with implantation of the source and drain regions. The semiconductor junction thus formed does not adversely impact the performance of the field effect transistor, and provides a low resistance ohmic gate contact. The gate need not be masked during source and drain implant, resulting in simplified fabrication.