The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 1994
Filed:
Oct. 07, 1993
Klaus Graff, Heilbronn, DE;
Werner Zurek, Lauffen, DE;
Temic Telefunken microelectronic GmbH, Heilbronn, DE;
Abstract
A method is described for manufacturing semiconductor components with short switching time, having a weakly doped semiconductor area in contact with a PN junction. In order to obtain an inhomogeneous impurity distribution in the axial direction of the semiconductor array, the following process steps are implemented: a) gold impurities are placed in the semiconductor array and homogeneously distributed there in a first diffusion process, b) a layer comprising a 3d transition metal affecting the charge carrier lifetime is deposited onto that surface side of the semiconductor array having a shorter distance from the weakly doped semiconductor area, c) the 3d transition metal is incorporated into the semiconductor array by a second diffusion process and is inhomogeneously distributed there, such that an impurity surplus is generated in a partial area of the weakly doped semiconductor area in the vicinity of the PN junction.