The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 1994
Filed:
Sep. 24, 1993
Shinichi Miyakuni, Itami, JP;
Takesi Kuragaki, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A selective ECR dry etching method for etching compound semiconductors includes dry etching an In-containing compound semiconductor material in an ECR plasma of a Cl.sub.2 /He mixture with a Cl.sub.2 /(He+Cl.sub.2) ratio from 0.05 to 0.2 and a gas pressure below 4.0.times.10.sup.-4 Torr. A selective ECR dry etching method includes dry etching a compound semiconductor material including no Al selectively with respect to a compound semiconductor material including Al using a plasma in an Cl.sub.2 /He/O.sub.2 mixture with a ratio of Cl.sub.2 /(He+Cl.sub.2) ratio within 0.05 to 0.2 and O.sub.2 less than 30% of the Cl.sub.2 gas at a gas pressure below 5.0.times.10.sup.-4 Torr.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile