The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 1994
Filed:
Dec. 21, 1992
Brian K Good, Greentown, IN (US);
Gregory J Manlove, Kokomo, IN (US);
Edward H Honnigford, Russiaville, IN (US);
Delco Electronics Corporation, Kokomo, IN (US);
Abstract
A MOS hysteresis comparator having a source transistor bias circuit which generates a source current Is that compensates for temperature and manufacturing process variations, thereby providing a hysteresis characteristic which is substantially insensitive to such temperature and manufacturing process variations. The source transistor bias circuit includes a set of MOS transistors which replicate the comparator load currents which occur at the switch points of the comparator, and a source transistor which mirrors the sum of the replicated currents to form the source current Is of the comparator.