The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 1994
Filed:
Jun. 16, 1993
Tetsuji Nagayama, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of producing a semiconductor device whereby it is possible to carry out anisotropic dry etching of a contact hole without generating dimensional losses even though a resist pattern has an inversely tapered cross-sectional shape. If the resist pattern is formed by using a chemical amplification negative resist material which is expected to be applied to excimer laser lithography, the resist pattern tends to have an inversely tapered cross-sectional shape due to resolution mechanism thereof. Thus, a hydrogen-enriched layer is formed in advance on a surface of a silicon oxide interlayer insulation film, and hydrogen released during etching is utilized for promoting deposition of carbonaceous polymer which is an etching reaction product. The carbonaceous polymer is deposited on a sidewall surface of the resist pattern and corrects an apparent cross-sectional shape into a vertical wall state. Therefore, diffusion of incident ion on an edge portion of the resist pattern can be prevented. The hydrogen-enriched layer can be formed, either by depositing silicon oxide, silicon nitride, amorphous silicon and the like in a CVD method, or by ion implantation of hydrogen into the silicon oxide interlayer insulation film.